A team from Peking University has developed 2D indium selenide (InSe) wafers, marking a critical leap toward high-speed, low-power electronics. Transistors made with this material at 10-nanometer channel length triple the intrinsic switching speed of current 3nm silicon-based tech while improving energy efficiency by an order of magnitude. Future chips using InSe could revolutionize devices: extending smartphone battery life, boosting computer speeds, and accelerating AI training. It also holds promise for flexible electronics and quantum computing.