【#Tech24H】Recently, the world’s first 300 mm (12-inch) silicon carbide (SiC) epitaxial wafer was successfully developed and introduced. As a core material of third-generation semiconductors, SiC offers significant advantages over traditional silicon in terms of high-voltage resistance, high-temperature tolerance, and high-frequency performance. Developed by Epiworld International Co., Ltd., this breakthrough 12-inch SiC epitaxial wafer represents a substantial increase in diameter compared to the current mainstream 6-inch products. A single 12-inch wafer can accommodate 4.4 times as many chips as a 6-inch wafer and 2.3 times that of an 8-inch wafer. This advancement will not only significantly enhance the production efficiency of downstream power devices but also substantially reduce the unit manufacturing cost of SiC chips, facilitating performance upgrades and cost optimization for power devices in sectors such as new energy vehicles and photovoltaics.